DocumentCode :
1835824
Title :
Amplifier design using /spl lambda//4 high impedance bias line with defect ground structure (DGS)
Author :
Si-Gyun Jeong ; Do-Kyeong Hwang ; Yong-Chae Jeong ; Chul-Dong Kim
Author_Institution :
Dept of Inf. & Commun. Eng., Chonbuk Nat. Univ., Chonju, South Korea
Volume :
2
fYear :
2002
fDate :
2-7 June 2002
Firstpage :
1161
Abstract :
In this paper, a new /spl lambda//4 bias transmission line that is added dumbbell-shaped defect ground structure (DGS) on ground plane of the conventional /spl lambda//4 bias transmission line is proposed. This DGS /spl lambda//4 bias transmission line maintains high impedance, but physical width is wider and length is shorter than that of the conventional bias line. If the proposed bias line is attached on signal transmission line, this bias line can reduces the 3/sup rd/ harmonic signal as well as the 2/sup nd/ harmonic signal. When the proposed bias line is adopted in power amplifier on IMT-2000 basestation transmitting band, the 3/sup rd/ harmonic signal is reduced about 26.5 dB than the conventional structure.
Keywords :
microstrip circuits; microwave power amplifiers; IMT-2000 basestation; amplifier design; defect ground structure; ground plane; harmonic signal; microstrip line; microwave circuit; power amplifier; quarter-wavelength high impedance bias transmission line; signal transmission line; Distributed parameter circuits; Etching; Frequency; High power amplifiers; Impedance; Inductance; Microstrip; Microwave bands; Power harmonic filters; Power transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011854
Filename :
1011854
Link To Document :
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