Title :
Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC´s
Author :
Huang, C. ; Yang, Y.H. ; Lee, G.H. ; Feng, G.C. ; Chi, T.J.
Author_Institution :
China Aerosp. Corp., Beijing, China
Abstract :
Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit modelling; power amplifiers; power integrated circuits; silicon-on-insulator; transient analysis; 0.1 micron; device physics; large signal power amplification; large signal transient characteristics; submicron basewidth HBT MMIC; submicron channel length thin film SOI/CMOS IC; CMOS integrated circuits; Circuit simulation; Computational modeling; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Microelectronics; Physics; Semiconductor thin films; Thin film devices;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503366
