DocumentCode
1835875
Title
Adaptive tessellation for the three-dimensional simulation of doping profiles
Author
Leitner, E. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear
1995
fDate
24-28 Oct 1995
Firstpage
610
Lastpage
612
Abstract
We present a new process simulation module which is capable of solving the coupled nonlinear partial differential equations of diffusion problems in three space dimensions. An adaptive gridding method has been developed in order to handle geometries consisting of multiple material regions of arbitrary shape
Keywords
diffusion; doping profiles; nonlinear differential equations; partial differential equations; semiconductor doping; semiconductor process modelling; adaptive gridding; adaptive tessellation; coupled nonlinear partial differential equations; diffusion; doping profiles; multiple material regions; process simulation module; three-dimensional simulation; Boron; Computational modeling; Doping profiles; Error correction; Grid computing; Microelectronics; Nonlinear equations; Object oriented modeling; Shape; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503367
Filename
503367
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