DocumentCode
1835925
Title
A comparison of direct Monte-Carlo and DOE simulations for optimising IC processes
Author
Gan, Xuewen ; Walton, Anthony J.
Author_Institution
Inst. of Microelectron., Beijing Univ., China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
616
Lastpage
618
Abstract
This paper presents a comparison of two approaches to predict response variation of IC process. These are the direct approach using Monte Carlo process and device simulation and the use of DOE techniques to create response surfaces from which response distributions can be produced. The relative merits of these two approaches are discussed and it is demonstrated that provided a good fit is obtained for the response surface the agreement between the two methods is good
Keywords
Monte Carlo methods; design of experiments; optimisation; semiconductor process modelling; DOE simulation; IC process optimisation; Monte-Carlo simulation; response surface; CMOS process; Computational modeling; Design for manufacture; Integrated circuit modeling; MOS devices; Manufacturing processes; Monte Carlo methods; Response surface methodology; Surface fitting; US Department of Energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503369
Filename
503369
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