Title :
MeV ion implantation and application
Author :
Ji, Chengzhou ; Lu, Wumg ; Li, Guohul
Author_Institution :
Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
Abstract :
This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented
Keywords :
ion implantation; semiconductor doping; GaAs:Si; MeV ion implantation; Si; activation; secondary defects; semiconductors; Annealing; Fabrication; Gallium arsenide; Implants; Insulation; Ion implantation; Isolation technology; Nuclear physics; Silicon; Solid state circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503380
