DocumentCode
1836176
Title
Optimization of boron doped polysilicon resistors
Author
Lee, Kyungho ; Kang, Hyunsoon ; Jang, Yungsoo ; Lim, Soonkwon
Author_Institution
Semicond. Res. & Dev. Center, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
fYear
1995
fDate
24-28 Oct 1995
Firstpage
659
Lastpage
661
Abstract
This paper is concerned with an optimized process of boron doped polysilicon resistors. First, we propose process conditions that make grain size bigger in order to minimize the ratio of grain boundary that results in the variation of polysilicon resistance. Second, we propose process conditions that sustain safe structure at continuous heat treatment processes, electrical and temperature characteristics
Keywords
boron; elemental semiconductors; grain boundaries; grain size; heat treatment; resistors; semiconductor doping; silicon; Si:B; boron doped polysilicon resistor; electrical characteristics; grain boundary; grain size; heat treatment; process optimization; resistance; temperature characteristics; Boron; Electric resistance; Grain boundaries; Grain size; Heat treatment; Research and development; Resistance heating; Resistors; Semiconductor process modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503382
Filename
503382
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