DocumentCode
1836209
Title
Fabrication of Ti and Co silicided shallow junctions using novel techniques
Author
Ma, M.P. ; Lin, C.T. ; Cheng, H.C.
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Taipei, Taiwan
fYear
1995
fDate
24-28 Oct 1995
Firstpage
662
Lastpage
664
Abstract
Excellent Ti and Co silicided shallow p+n and n+ p junctions have been formed using implant through metal and silicide (ITM and ITS) and implant through poly-Si (ITP) schemes. Various fabrication processes and their impacts on the resultant junction characteristics are characterized and discussed
Keywords
cobalt compounds; ion implantation; p-n junctions; semiconductor technology; titanium compounds; ITM; ITP; ITS; Si-CoSi; Si-TiSi; fabrication; implant through metal; implant through polysilicon; implant through silicide; n+p junction; p+n junction; silicided shallow junctions; Annealing; Circuits; Diodes; Fabrication; Implants; MOSFETs; Silicides; Temperature; Titanium; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503383
Filename
503383
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