Title :
Techniques for electron-beam fabrication of 0.5 μm linewidth masks using AZ1350 positive photoresist
Author :
Zhao, Lixin ; Peng, Li ; Zhang, Zhongyi ; Yu, Xiangdong
Author_Institution :
Masks Center, China Huajing Electron. Group Corp., Jiangsu, China
Abstract :
Techniques are described in detail for fabrication of 0.5 μm-linewidth masks on an electron-beam (e-beam) exposure system using chrome blanks coated with commercial AZ1350 positive photoresist. The proximity effects occurring during e-beam exposure are theoretically analyzed. Data compensation for e-beam forward scattering and suppression of e-beam back scattering by using a low-sensitivity photoresist have been employed to eliminate the influence of the proximity effects on the critical dimensions (CD) in e-beam exposure of submicron patterns. Masks with 0.5±0.1 μm linewidth have been successfully fabricated. Spray development and plasma etching of the chrome film were used in the processing. The reasons for and advantages of using AZ1350 positive photoresist are briefly discussed
Keywords :
electron beam lithography; masks; photoresists; proximity effect (lithography); sputter etching; 0.5 μm linewidth masks; 0.5 mum; AZ1350 positive photoresist; chrome blanks; critical dimensions; data compensation; e-beam back scattering suppression; e-beam forward scattering; electron-beam exposure system; electron-beam fabrication; low-sensitivity photoresist; plasma etching; proximity effects; spray development; submicron patterns; Acceleration; Electromagnetic scattering; Electron beams; Etching; Materials testing; Optical device fabrication; Optical materials; Particle beams; Proximity effect; Resists;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503389
