Techniques for electron-beam fabrication of 0.5 μm linewidth masks using AZ1350 positive photoresist

Author

Zhao, Lixin ; Peng, Li ; Zhang, Zhongyi ; Yu, Xiangdong

Author_Institution

Masks Center, China Huajing Electron. Group Corp., Jiangsu, China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

680

Lastpage

684

Abstract

Techniques are described in detail for fabrication of 0.5 μm-linewidth masks on an electron-beam (e-beam) exposure system using chrome blanks coated with commercial AZ1350 positive photoresist. The proximity effects occurring during e-beam exposure are theoretically analyzed. Data compensation for e-beam forward scattering and suppression of e-beam back scattering by using a low-sensitivity photoresist have been employed to eliminate the influence of the proximity effects on the critical dimensions (CD) in e-beam exposure of submicron patterns. Masks with 0.5±0.1 μm linewidth have been successfully fabricated. Spray development and plasma etching of the chrome film were used in the processing. The reasons for and advantages of using AZ1350 positive photoresist are briefly discussed

Keywords

electron beam lithography; masks; photoresists; proximity effect (lithography); sputter etching; 0.5 μm linewidth masks; 0.5 mum; AZ1350 positive photoresist; chrome blanks; critical dimensions; data compensation; e-beam back scattering suppression; e-beam forward scattering; electron-beam exposure system; electron-beam fabrication; low-sensitivity photoresist; plasma etching; proximity effects; spray development; submicron patterns; Acceleration; Electromagnetic scattering; Electron beams; Etching; Materials testing; Optical device fabrication; Optical materials; Particle beams; Proximity effect; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503389

Filename

503389