Title :
Series switch compatible with CMOS technology
Author :
Yongming Cai ; Katehi, P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Series MEMS switches with metal-to-metal contact have been fabricated to operate from DC to 40 GHz. Parylene is used as the structure material and polyamide as the sacrificial layer The mechanical structure is of bridge type. The measured insertion loss is less than 0.5 dB from DC to 40 GHz, when switch is on. The isolation ranges from 40 dB at 2 GHz to 15 dB at 40 GHz, when the switch is off. A new way of planarizing the circuit surface was presented.
Keywords :
CMOS integrated circuits; UHF devices; UHF integrated circuits; field effect MMIC; micromechanical devices; microwave switches; millimetre wave devices; polymer films; surface treatment; 0 to 40 GHz; CMOS compatible switches; MEMS switch; MMIC; bridge type mechanical structure; fabrication process; metal-to-metal contact; parylene structure material; polyamide sacrificial layer; series switches; surface planarization; Bridge circuits; CMOS technology; Contacts; Dielectric materials; Microswitches; Radio frequency; Silicon; Stress; Switches; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011878
