DocumentCode
1836401
Title
A Sub-μW fully programmable CMOS DPS for uncooled infrared fast imaging
Author
Margarit, J.M. ; Teres, L. ; Graells, F. Serra
Author_Institution
Centro Nat. de Microelectron. CSIC, Inst. de Microelectron. de Barcelona, Barcelona
fYear
2008
fDate
18-21 May 2008
Firstpage
1424
Lastpage
1427
Abstract
This paper presents a new low-power and fully programmable digital CMOS active pixel sensor for uncooled and fast IR imagers. The proposed self-biased topology includes built-in input capacitance compensation, mixed integration, A/D conversion and a purely digital I/O interface, all at pixel level. Furthermore, full FPN compensation is also supplied by digital tuning of the individual offset and gain of each DPS during read-out at no speed costs. Two circuit implementations for IR PbSe sensors have been integrated in standard 0.35 mum CMOS 2-polySi 4-metal technology, and exhaustive experimental data is presented from electrical tests.
Keywords
CMOS image sensors; infrared imaging; low-power electronics; programmable circuits; A/D conversion; CMOS 2-polySi 4-metal technology; IR sensors; PbSe; built-in input capacitance compensation; digital CMOS active pixel sensor; digital tuning; fully programmable CMOS DPS; mixed integration; purely digital I/O interface; self-biased topology; size 0.35 mum; uncooled fast IR imagers; uncooled infrared fast imaging; CMOS image sensors; CMOS technology; Capacitance; Circuit testing; Circuit topology; Image converters; Infrared image sensors; Infrared imaging; Optical imaging; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541695
Filename
4541695
Link To Document