Transient thermal model for the MQUAD microelectronic package

Author

Guenin, Bruce M.

Author_Institution

Metals Res. Labs., Olin Corp., New Haven, CT, USA

fYear

1994

fDate

1-3 Feb 1994

Firstpage

86

Lastpage

95

Abstract

The MQUAD microelectronic package was developed to provide a high level of thermal performance for high leadcount integrated circuits.¹ A numerical, lumped-parameter transient thermal model has been developed which accurately predicts the temperature of the die and other components of an MQUAD package in situations in which the power to the die changes. Examples of such situations are the power-up and power-down cycles and power excursions. The model is used to predict the behavior of a 160 lead, cavity-down MQUAD package in these situations under conditions of low and high circuit board conductivity and natural and forced convection. The predictions of the model are shown to be in good agreement with experimental values for representative situations

Keywords

equivalent circuits; integrated circuit technology; modelling; packaging; thermal analysis; MQUAD; forced convection; high leadcount integrated circuits; lumped-parameter model; microelectronic package; natural convection; transient thermal model; Copper alloys; Integrated circuit modeling; Integrated circuit packaging; Microelectronics; Predictive models; Semiconductor device packaging; Steady-state; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 1994. SEMI-THERM X., Proceedings of 1994 IEEE/CPMT 10th

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1852-8

Type

conf

DOI

10.1109/STHERM.1994.288989

Filename

288989