Title :
40 GHz monolithic integrated mixer in SiGe bipolar technology
Author :
Hackl, S. ; Bock, J. ; Wurzer, M. ; Scholtz, Arpad L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
Future broadband wireless services will use carrier frequencies in the range of 10 GHz to about 42 GHz. This raises the demand for low-cost components of key RF building blocks like LNAs, mixers, and oscillators for frequencies up to 42 GHz. This work describes an active mixer in a pre-production 0.4 /spl mu/m SiGe bipolar technology with bandwidth in the range mentioned above. A gain of 25 dB and double-sideband noise figure of 15 dB is achieved at 40 GHz.
Keywords :
Ge-Si alloys; bipolar MIMIC; integrated circuit design; millimetre wave mixers; semiconductor materials; 0.4 micron; 15 dB; 25 dB; 40 GHz; EHF; Gilbert cell; MM-wave mixer; SiGe; SiGe bipolar technology; active mixer; broadband wireless services; monolithic integrated mixer; Bandwidth; Circuit synthesis; Cutoff frequency; Germanium silicon alloys; Manufacturing; Metallization; Paper technology; Parasitic capacitance; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011884
