Title :
Designing reliable high-power limiter circuits with GaAs PIN diodes
Author :
Smith, D.G. ; Heston, D.D. ; Heston, J. ; Heimer, B. ; Decker, K.
Author_Institution :
Raytheon Syst. Co., Dallas, TX, USA
Abstract :
This paper presents the latest GaAs PIN diode rf reliability data. An acceleration factor predicting lifetime as a function of diode perimeter and rf power level is proposed. Power handling measurements of an improved PIN diode layout that provides superior performance for both power handling and small signal loss/bandwidth is presented. Finally the design principles for a high power limiter will be reviewed.
Keywords :
III-V semiconductors; circuit reliability; gallium arsenide; limiters; p-i-n diodes; GaAs; GaAs PIN diode; RF power handling; acceleration factor; bandwidth; design technique; high-power limiter circuit; lifetime; reliability; small-signal loss; Circuit testing; Gallium arsenide; Geometry; Power measurement; Power system reliability; Semiconductor diodes; Stress; Switches; Switching circuits; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011885
