Measurement of minority carrier transport parameters in heavily doped shallow implanted layers

Author

Pan, Y. ; Kleefstra, M.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

fYear

1990

fDate

5-7 March 1990

Firstpage

15

Lastpage

20

Abstract

Test structures measuring the hole transport parameters in arsenic-implanted shallow emitters were designed and fabricated. The effects of annealing and gettering on the transport parameters are investigated. The measured diffusion length in implanted emitters with well-controlled processing conditions is close to the values in an epitaxially grown layer (phosphorus doped). Simplicity and reliability should allow these structures to be employed in real processing lines.<>

Keywords

annealing; arsenic; bipolar transistors; elemental semiconductors; getters; integrated circuit testing; ion implantation; silicon; Si:As emitters; diffusion length; effects of annealing; epitaxially grown layer; gettering effects; heavily doped shallow implanted layers; hole transport parameters; implanted emitters; minority carrier transport parameters measurement; semiconductors; test structures; well-controlled processing conditions; Annealing; Doping; Electric variables measurement; Geometry; Gettering; Laboratories; Length measurement; Silicon; Solid modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67873

Filename

67873