Title :
Simulation and measurement results of 150 GHz integrated silicon IMPATT diodes
Author :
Luschas, M. ; Judaschke, R. ; Luy, J.-F.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Technische Univ. Hamburg-Harburg, Germany
Abstract :
The integration of IMPATT diodes and their housing in a single technology process is discussed in this paper. The integrated device is designed to improve reliability and reproducibility compared to conventional beam-lead diodes with quartz ring housing. In a single step, the diode with its housing is bonded onto a diamond heat sink. The device can be employed both in a waveguide resonator and in a planar oscillator circuit. Results presented here are obtained in a rectangular, reduced height waveguide resonator. RF-output power levels of more than 100 mW at 135 GHz and 45 mW at 150 GHz are reported.
Keywords :
IMPATT diodes; elemental semiconductors; heat sinks; semiconductor device packaging; silicon; 100 to 45 mW; 135 to 150 GHz; RF output power; Si; device bonding; diamond heat sink; housing; integrated silicon IMPATT diode; single technology process; waveguide resonator; Bonding; Diodes; Doping profiles; Fabrication; Molecular beam epitaxial growth; Planar waveguides; Production; Rectangular waveguides; Reproducibility of results; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011894
