Simulation of CMOS interconnection with the lumped element ADI-PSTD method in wide band

To estimate the impact of metal-voiding on the frequency-dependent transmission line parameters of the CMOS interconnection, lumped elements have been introduced to the numerical technique. Alternating-direction implicit (ADI) and pseudo-spectral time-domain (PSTD) methods is combined, together with the lumped elements. A three-dimensional ADI-PSTD scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. Therefore, solid-state devices with interconnections have been modeled accurately. As an applied example, a Si-MMIC RF switch is simulated. Results are more accurate than those coming from a semi-analytical model of microwave circuit simulator.