A low-power SiGe feedback amplifier with over 110GHz bandwidth

Author

Vera, L. ; Long, J.R. ; Gross, B.J.

Author_Institution

Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft, Netherlands

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

1

Lastpage

4

Abstract

The bandwidth of a single-stage, SiGe-HBT Darlington amplifier with feedback is improved 53% by cascoding and series peaking at the input, and by 25% for peaking alone. The cascode amplifier realizes 12-dB gain and better than 110GHz bandwidth (123GHz from simulation). Measured |S₁₁| and |S₂₂| are >10dB, group delay is ~6ps, and GBW/P_dc is 9.1GHz/mW. The 0.003mm² amplifier core is implemented in 90nm SiGe-BiCMOS and consumes 48mW from a 2.1V supply.

Keywords

BiCMOS integrated circuits; feedback amplifiers; heterojunction bipolar transistors; millimetre wave amplifiers; SiGe; SiGe-BiCMOS; cascode amplifier; cascoding; frequency 123 GHz; gain 12 dB; low-power SiGe feedback amplifier; power 48 mW; series peaking; single-stage SiGe-HBT Darlington amplifier; size 90 nm; voltage 2.1 V; Bandwidth; Broadband amplifiers; Frequency measurement; Gain; Radio frequency; Silicon germanium; Transmission line measurements; Broadband shunt-feedback amplifier; Darlington amplifier; SiGe-HBT; millimeter-wave amplifier; series peaking;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981273

Filename

6981273