• DocumentCode
    183722
  • Title

    An active frequency doubler with DC-100GHz range

  • Author

    Vera, L. ; Long, J.R. ; Gross, B.J.

  • Author_Institution
    Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 1 2014
  • Firstpage
    9
  • Lastpage
    12
  • Abstract
    A broadband, active doubler based on asymmetrically biased differential pairs delivers conversion gain (CG) from DC to 100 GHz. Measured CG is >10 dB up to 50 GHz, >6 dB up to 80 GHz, and >0 dB up to 100 GHz. Second-harmonic (4× the input) suppression is -28 dBc at 50 GHz. Implemented in a 90 nm SiGe technology, the 0.371 mm2 multiplier core consumes 25 mA from a 4.5 V supply.
  • Keywords
    Ge-Si alloys; frequency multipliers; SiGe; SiGe technology; active doubler based; asymmetrically biased differential pairs; conversion gain; current 25 mA; frequency 100 GHz; frequency doubler; size 0.371 mm; size 90 nm; voltage 4.5 V; Bandwidth; Frequency measurement; Harmonic analysis; Impedance matching; Power generation; Power measurement; Silicon germanium; SiGe-BiCMOS technology; SiGe-HBT; active multiplier; frequency doubler; millimeter-wave integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
  • Conference_Location
    Coronado, CA
  • Type

    conf

  • DOI
    10.1109/BCTM.2014.6981275
  • Filename
    6981275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=183722