High-resistivity SiGe BiCMOS technology development

Author

Stamper, Anthony ; Camillo-Castillo, Renata ; Ding, Han ; Dunn, James ; Jaffe, Matt ; Jain, Vinesh ; Joseph, Alvin ; McCallum-Cook, Ian ; Newton, Kim ; Parthasarathy, Srinivasan ; Rassel, Robert ; Schmidt, N. ; Srihari, S. ; Wolf, Robert ; Zierak, Michael

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

25

Lastpage

28

Abstract

IBM first qualified a 0.35μm generation 1000 Ω-cm high resistivity substrate (HiRES) SiGe BiCMOS technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf front-end-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Ω-cm, 1^st generation HiRES, and 2^nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; cellular radio; circuit optimisation; field effect transistor switches; low noise amplifiers; power amplifiers; radiofrequency integrated circuits; three-dimensional integrated circuits; wireless LAN; BiCMOS technology; CMOS NFET switch RF front-end IC; CMOS NFET switch devices; FEIC; HiRES NPN PA; IBM; LNA; NPN emitters; NPN low noise amplifier; SiGe; WiFi; cellular NPN power amplifier; high resistivity substrate; size 0.35 mum; through silicon via; BiCMOS integrated circuits; Radio frequency; Resistance; Silicon; Silicon germanium; Substrates; Switches; High-resistivity substrate; LNA; PA; SiGe BiCMOS; front-end-IC; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981278

Filename

6981278