High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process

Author

Lischke, S. ; Knoll, D. ; Zimmermann, L. ; Scheit, A. ; Mai, C. ; Trusch, A. ; Voigt, K. ; Kroh, M. ; Kurps, R. ; Ostrovskyy, P. ; Yamamoto, Y. ; Korndorfer, F. ; Peczek, A. ; Winzer, G. ; Tillack, B.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

29

Lastpage

32

Abstract

Waveguide-coupled, Ge lateral pin photodiodes featuring bandwidths of more than 50GHz and 40Gbps functionality are presented. Non-doping implantations are applied that allow one to reach this performance even under the effect of thermal steps acting when the diodes are integrated in a high-performance BiCMOS process. The effect of these implants is to lower the minority-carrier lifetime(s) and in this way, to reduce bandwidth degradation by minority-carrier diffusion in non-depleted, weakly doped regions.

Keywords

BiCMOS integrated circuits; carrier lifetime; elemental semiconductors; germanium; p-i-n photodiodes; Ge; bandwidth degradation; high-performance BiCMOS process; minority-carrier diffusion; minority-carrier lifetime; nondepleted weakly doped regions; nondoping implantations; photonic BiCMOS process; thermal steps; waveguide-coupled Ge lateral pin photodiodes; Annealing; Bandwidth; BiCMOS integrated circuits; Implants; PIN photodiodes; Photonics; Silicides; BiCMOS; Ge photodiode; Silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981279

Filename

6981279