Title :
Adhesion of fluorinated amorphous carbon to various materials [metallisation]
Author :
Mountsier, T.W. ; Samuels, J.A.
Author_Institution :
Novellus Syst. Inc., San Jose, CA, USA
Abstract :
Much of the work to date on fluorinated amorphous carbon integration has focused on adhesion to dielectric films. In this study, we examine the interaction between FlAC and several different metals and barrier materials, including: Ta, Ti, TiN, Al, W, and Cu. The FlAC was deposited from hexafluorobenzene in an HDP-CVD reactor. Adhesive behaviour was gauged using tape test and stud pull techniques on both as-deposited and annealed (400°C, 4 hr) samples. Only the FlAC-on-Ta film stack showed degradation following annealing. SIMS analysis shows possible fluorine migration into the tantalum layer
Keywords :
adhesion; amorphous state; annealing; carbon; chemical interdiffusion; diffusion barriers; fluorine; integrated circuit interconnections; integrated circuit metallisation; interface structure; mechanical testing; plasma CVD; secondary ion mass spectra; 4 hr; 400 C; Al; Al adhesion; C:F-Al; C:F-Cu; C:F-Ta; C:F-Ti; C:F-TiN; C:F-W; Cu; Cu adhesion; FlAC-on-Ta film stack degradation; HDP-CVD reactor; SIMS analysis; Ta; Ta adhesion; Ti; Ti adhesion; TiN; TiN adhesion; W; W adhesion; adhesion; adhesive behaviour; annealed samples; as-deposited samples; barrier materials; dielectric films; fluorinated amorphous carbon adhesion; fluorinated amorphous carbon integration; fluorine migration; hexafluorobenzene; metal layers; metallisation; stud pull techniques; tantalum layer; tape test techniques; Adhesives; Amorphous materials; Annealing; Dielectric films; Dielectric materials; Inductors; Inorganic materials; Organic materials; Testing; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704923
