An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC´s

Author

John, J.P. ; Trivedi, V.P. ; Kirchgessner, J. ; Morgan, D. ; To, I. ; Welch, P.

Author_Institution

Freescale Semicond. Inc., Tempe, AZ, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

88

Lastpage

91

Abstract

Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to <;1dB/mm at ~80GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; circuit optimisation; heterojunction bipolar transistors; low-power electronics; millimetre wave integrated circuits; power consumption; road vehicle radar; semiconductor device testing; transmission lines; BEOL; CML gate delay; HBT performance metrics; automotive radar IC; frequency 260 GHz; frequency 350 GHz; ground plane optimization; millimeter-wave BiCMOS technology; power consumption; size 180 nm; thermal budget; time 3.2 ps; transmission line loss; BiCMOS integrated circuits; Heterojunction bipolar transistors; Layout; Metals; Optimization; Silicon germanium; Bipolar transistors; Millimeter wave technology; SiGe; SiGe:C; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981292

Filename

6981292