Title :
A 3 V, 0.35 /spl mu/m CMOS Bluetooth receiver IC
Author :
Wenjun Sheng ; Bo Xia ; Emira, A. ; Chunyu Xin ; Valero-Lopez, A.Y. ; Sung Tae Moon ; Sanchez-Sinencio, E.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper presents a monolithic low-IF Bluetooth receiver. The highlights of the receiver include a low-power active complex filter with a non-conventional tuning scheme and a high performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25 mm/sup 2/ die using TSMC 0.35 /spl mu/m standard CMOS process. -82 dBm sensitivity at 1e-3 BER, -10 dBm IIP3 and 15 dB noise figure were achieved In the measurements.
Keywords :
CMOS integrated circuits; demodulators; digital radio; frequency hop communication; frequency shift keying; mixed analogue-digital integrated circuits; radio receivers; spread spectrum communication; 0.35 micron; 15 dB; 3 V; BER; CMOS Bluetooth receiver IC; TSMC standard CMOS process; bit error rate; low-power active complex filter; mixed-mode GFSK demodulator; monolithic low-IF receiver; tuning scheme; Active filters; Bit error rate; Bluetooth; CMOS integrated circuits; CMOS process; Demodulation; Measurement standards; Monolithic integrated circuits; Noise figure; Noise measurement;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011934
