Title :
Agile fab concepts for cost effective and QTAT mini fab
Author :
Mikata, Yuuichi ; Mitsutake, Kunihiro ; Arikado, Tsunetoshi ; Okumura, Katsuya
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
Recently SoC devices require QTAT and low cost. Also SoC device quickly change its design so that total production amount is not so many. In this situation we propose the Agile fab to solve these problems. The basic concept of the Agile fab consists of following three ideas; (i) Small size Jab supported by virtual Jab, (ii) Multi-task and multi-functional tools, (iii) Minimization and smoothing of RPT (Raw Process Time). WIP control is important for maximum production and minimized X-factor. Multi-functional and multi-task tools make it possible to reduce the excess capacity and the excess investment. Those tools are furnace, dry etching, wet cleaning, stencil ion implantation. Reduction of RPT is achieved by the sequential process, stencil mask ion implantation process, scan-coating for insulating layers and new electro-plating process. The total RPT is reduced less than a half of conventional case. The tool numbers can be reduced to about a half using the multi-functional, multi-task tools and minimization of RPT
Keywords :
etching; furnaces; integrated circuit economics; integrated circuit technology; integrated circuit yield; ion implantation; minimisation; process control; semiconductor technology; surface cleaning; Agile fab; QTAT; SoC devices; cost; electro-plating process; minimization; multi-functional tools; raw process time; scan-coating; sequential process; smoothing; stencil ion implantation; stencil mask ion implantation; system on chip; virtual fab; wet cleaning; Accidents; Consumer electronics; Costs; Furnaces; Home appliances; Investments; Ion implantation; Manufacturing processes; Production; Smoothing methods;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962902