Title :
An oxide cap process for a PTFE-based IC dielectric
Author :
Rosenmayer, Tom ; Hammes, Jeff ; Bartz, John ; Spevack, P.
Author_Institution :
W.L. Gore & Assoc. Inc., Eau Claire, WI, USA
Abstract :
Polytetrafluoroethylene (PTFE) has a low dielectric constant (1.9-2.1), high dielectric strength, good temperature resistance, and outstanding chemical inertness. It is being considered as a dielectric for both Al gap-fill and Cu damascene ULSI interconnect applications. A process has been developed which results in the ability to deposit an oxide cap layer that has good adhesion to the underlying PTFE dielectric. The process is defined, and annealing, CMP, stud pull test, XPS, and AFM results are presented
Keywords :
ULSI; X-ray photoelectron spectra; adhesion; annealing; atomic force microscopy; chemical mechanical polishing; dielectric thin films; electric strength; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; permittivity; polymer films; silicon compounds; AFM; Al gap-fill ULSI interconnect applications; Al-SiO2; CMP; Cu damascene ULSI interconnect applications; Cu-SiO2; PTFE dielectric; PTFE-based IC dielectric; SiO2; XPS; adhesion; annealing; chemical inertness; dielectric constant; dielectric strength; oxide cap layer; oxide cap process; polytetrafluoroethylene; stud pull test; temperature resistance; Adhesives; Annealing; Coatings; Dielectric breakdown; Dielectric constant; Etching; Plasma applications; Plasma temperature; Surface treatment; Testing;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704924
