An oxide cap process for a PTFE-based IC dielectric

Author

Rosenmayer, Tom ; Hammes, Jeff ; Bartz, John ; Spevack, P.

Author_Institution

W.L. Gore & Assoc. Inc., Eau Claire, WI, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

283

Lastpage

285

Abstract

Polytetrafluoroethylene (PTFE) has a low dielectric constant (1.9-2.1), high dielectric strength, good temperature resistance, and outstanding chemical inertness. It is being considered as a dielectric for both Al gap-fill and Cu damascene ULSI interconnect applications. A process has been developed which results in the ability to deposit an oxide cap layer that has good adhesion to the underlying PTFE dielectric. The process is defined, and annealing, CMP, stud pull test, XPS, and AFM results are presented

Keywords

ULSI; X-ray photoelectron spectra; adhesion; annealing; atomic force microscopy; chemical mechanical polishing; dielectric thin films; electric strength; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; permittivity; polymer films; silicon compounds; AFM; Al gap-fill ULSI interconnect applications; Al-SiO₂; CMP; Cu damascene ULSI interconnect applications; Cu-SiO₂; PTFE dielectric; PTFE-based IC dielectric; SiO₂; XPS; adhesion; annealing; chemical inertness; dielectric constant; dielectric strength; oxide cap layer; oxide cap process; polytetrafluoroethylene; stud pull test; temperature resistance; Adhesives; Annealing; Coatings; Dielectric breakdown; Dielectric constant; Etching; Plasma applications; Plasma temperature; Surface treatment; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704924

Filename

704924