Title :
A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs
Author :
Pawlak, A. ; Lehmann, S. ; Schroter, M.
Author_Institution :
Tech. Univ. Dresden, Dresden, Germany
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
A simple yet accurate extraction method for the emitter and thermal resistance of bipolar transistors is presented. Only DC measurements taken on a thermally controlled wafer prober are required. The knowledge of the collector resistance is preferable, but not mandatory. The method yields excellent results when applied to advanced HBT technologies.
Keywords :
heterojunction bipolar transistors; thermal resistance; BJT; HBT; accurate method; bipolar transistors; emitter resistance; extraction method; thermal resistance; thermally controlled wafer prober; Decision support systems; Parameter extraction; compact bipolar transistor models; emitter resistance; external collector resistance; self-heating; thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981308
