Title :
A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process
Author :
Sonmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, R. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit layout; preamplifiers; semiconductor materials; 1.2 micron; 16.3 dB; 24 GHz; HBT foundry process; IF buffer; ISM-band; Ka band; MMIC process; Si-SiGe; Si/SiGe; consumer-oriented systems; conversion gain; intermediate frequency; layout techniques; local oscillator; preamplifier; receiver front-end; relaxed emitter scaling; Circuit synthesis; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit layout; Integrated circuit technology; Local oscillators; MMICs; Mixers; Preamplifiers; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011946