Title :
A study on transient intra-device thermal coupling in multifinger SiGe HBTs (Student)
Author :
D´Esposito, Rosario ; Weis, M. ; Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Zimmer, T.
Author_Institution :
Lab. IMS, Univ. de Bordeaux, Talence, France
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
This paper presents a study of transient mutual thermal coupling occurring between the fingers of trench isolated SiGe HBTs. Three-dimensional thermal TCAD simulations have been carried out to obtain the temperature evolution in transient operation in a multifinger HBT structure. The same behavior has been simulated using a netlist-based model, which provides an accurate representation of the substrate thermal coupling between active device areas. On-wafer measurements in pulsed conditions have been conducted on specially designed test structures that permit to determine the thermal coupling between the different fingers of a 5x(CBEBC) SiGe HBT; the results from the measurements are found to be in good agreement with a simulation in which the thermal coupling network has been added to the thermal nodes of five HiCuM transistor models.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; isolation technology; microwave bipolar transistors; semiconductor device measurement; technology CAD (electronics); thermal analysis; 3D thermal TCAD simulations; HiCuM transistor models; SiGe; multifinger SiGe HBT; on-wafer measurements; substrate thermal coupling; transient intradevice thermal coupling; transient mutual thermal coupling; trench isolated SiGe HBT; Couplings; Fingers; Heating; Integrated circuit modeling; Silicon germanium; Temperature measurement; Transient analysis; Heterojunction Bipolar Transistors; Intra-device; Multifinger; Mutual coupling; Silicon germanium; Thermal capacitance; Transient thermal coupling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981309
