DocumentCode :
1837943
Title :
Metal-insulator-Si hybrid plasmonic waveguide components for on-chip photonics
Author :
Zhu, Shiyang ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2012
fDate :
27-29 Aug. 2012
Firstpage :
128
Lastpage :
129
Abstract :
Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.
Keywords :
CMOS integrated circuits; copper; integrated optics; optical couplers; optical losses; optical resonators; optical waveguides; plasmonics; silicon-on-insulator; Cu-SiO2-Si; HPW; coupling efficiency; extinction ratio; free spectral range; metal-insulator-silicon hybrid plasmonic waveguide components; on-chip photonics; plasmonic waveguide-ring resonator; propagation loss; silicon electronic-photonic integrated circuits; standard CMOS technology; CMOS integrated circuits; Optical waveguides; Photonics; Plasmons; Propagation losses; Silicon; Plasmonics; photonic integarted circuits; waveguide-ring resonator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation (APCAP), 2012 IEEE Asia-Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0666-9
Type :
conf
DOI :
10.1109/APCAP.2012.6333181
Filename :
6333181
Link To Document :
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