DocumentCode :
183806
Title :
An electrothermal PIN diode model with substrate injection
Author :
DiVergilio, Adam W. ; Pekarik, John J. ; Jain, Vinesh
Author_Institution :
IBM Corp., Essex Junction, VT, USA
fYear :
2014
fDate :
Sept. 28 2014-Oct. 1 2014
Firstpage :
207
Lastpage :
210
Abstract :
This paper presents a compact model for an integrated 3-terminal PIN diode suitable for SPICE simulation. The model described within represents a significant extension to the standard 2-terminal diode model of SPICE, capturing phenomena critical to the accurate prediction of diode behavior in modern integrated process technologies. In particular, the inclusion of self-consistent electrothermal modeling and substrate injection effects is key to improving simulation accuracy for diodes operating in a forward conductive state, such as would be common for PIN diodes. The model is implemented in Verilog-A and hardware-verified results are presented for a 90nm SiGe BiCMOS technology featuring a high-performance integrated PIN diode.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; SPICE; hardware description languages; p-i-n diodes; semiconductor device models; 2-terminal diode model; SPICE simulation; SiGe; SiGe BiCMOS technology; Verilog-A; diode behavior; hardware-verified results; high-performance integrated PIN diode; integrated 3-terminal PIN diode; modern integrated process technologies; self-consistent electrothermal modeling; substrate injection effects; Computational modeling; Hardware design languages; Integrated circuit modeling; Mathematical model; PIN photodiodes; Semiconductor device modeling; Substrates; Compact Model; PIN Diode; SPICE; Semiconductor Device Modeling; Verilog-A;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
Type :
conf
DOI :
10.1109/BCTM.2014.6981316
Filename :
6981316
Link To Document :
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