Title :
SEE sensitivities of selected advanced flash and first-in-first-out memories
Author :
Koga, R. ; Tran, V. ; George, J. ; Crawford, K. ; Crain, S. ; Zakrzewski, M. ; Yu, P.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.
Keywords :
flash memories; integrated circuit testing; integrated memory circuits; radiation effects; transient response; FIFO memories; SEE sensitivities; first-in-first-out memories; flash memories; high LET ions; semi-permanent upsets; single event effects; transient upsets; CMOS technology; Clocks; Control systems; Flash memory; Manufacturing; Nonvolatile memory; Random access memory; Read-write memory; Single event upset; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
DOI :
10.1109/REDW.2004.1352903
