• DocumentCode
    1838125
  • Title

    Dynamic SDRAM SEFI detection and recovery test results

  • Author

    Guertin, Steven M. ; Patterson, Jeffrey D. ; Nguyen, Duc N.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2004
  • fDate
    22-22 July 2004
  • Firstpage
    62
  • Lastpage
    67
  • Abstract
    Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm 2/mg and the saturated cross section is 6×10 -5cm 2. Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.
  • Keywords
    DRAM chips; SRAM chips; integrated circuit testing; radiation effects; SDRAMS; SEFI identification algorithm; SEFI in-situ recovery; SEFI response threshold; SEU; dynamic SEFI detection; high current radiation response; saturated cross section; single event functionality interrupts; Circuit testing; Error analysis; Laboratories; Power system management; Propulsion; Radiation effects; SDRAM; Single event upset; Space vehicles; Technology management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2004 IEEE
  • Conference_Location
    Atlanta, GA, USA
  • Print_ISBN
    0-7803-8697-3
  • Type

    conf

  • DOI
    10.1109/REDW.2004.1352906
  • Filename
    1352906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1838125