A highly integrated 0.25 /spl mu/m BiCMOS chipset for 3G UMTS/WCDMA handset RF sub-system

Author

Brunel, D. ; Caron, C. ; Cordier, C. ; Soudee, E.

Author_Institution

Philips Semicond., Caen, France

fYear

2002

fDate

3-4 June 2002

Firstpage

191

Lastpage

194

Abstract

The complete active portion of the 3G UMTS/WCDMA cellular handset RF sub-system is achieved with three RFICs. This chipset comprises a fully integrated ZIF receiver including RF VCO/PLL and UNITS clock generation, a fully Integrated direct conversion like transmitter including RF VCO/PLL, and a 25 dBm average power amplifier including power detection circuitry. The three RFICs use the same baseline 0.25 /spl mu/m BiCMOS technology opening possibilities to even higher integration level. This chipset is targeted at handset class 3 and 4 (PA is class 4 compatible only) European and Japanese 3 G UMTS and WCDMA standards.

Keywords

BiCMOS analogue integrated circuits; UHF integrated circuits; UHF mixers; UHF power amplifiers; cellular radio; code division multiple access; phase locked loops; radio receivers; telephone sets; 3G cellular phones; European standards; Japanese standards; RF VCO/PLL; UMTS/WCDMA handset RF subsystem; UNITS clock generation; direct high power mixer; highly integrated BiCMOS chipset; integrated ZIF receiver; power amplifier; transmitter RFIC; 3G mobile communication; BiCMOS integrated circuits; Clocks; Multiaccess communication; Phase locked loops; Power generation; Radio frequency; Radiofrequency integrated circuits; Telephone sets; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012029

Filename

1012029