DocumentCode
1838190
Title
Heavy ion SEE testing of Xilinx one-time programmable configuration PROMs
Author
George, Jeffrey ; Swift, Gary ; Guertin, Steven ; Carmichael, Carl ; Rezgui, Sana ; Koga, Rocky
Author_Institution
Aerosp. Corp., El Segundo, CA, USA
fYear
2004
fDate
22-22 July 2004
Firstpage
72
Lastpage
78
Abstract
We compare the results of single event effects in two sizes and grades of programmable read-only-memories (PROMs) in the Xilinx 17xx device family. The main failure modes include address upsets, end-of-part failures, and a low-power standby mode requiring a power cycle to recover.
Keywords
PROM; integrated circuit reliability; integrated circuit testing; ion beam effects; address upsets; end-of-part failures; failure modes; heavy ion SEE testing; heavy ion beams; low-power standby mode; one-time programmable configuration PROM; power cycle reset; programmable read-only-memories; single event effects; Aerospace testing; Clocks; Counting circuits; EPROM; Field programmable gate arrays; Laboratories; PROM; Propulsion; Radiation detectors; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7803-8697-3
Type
conf
DOI
10.1109/REDW.2004.1352908
Filename
1352908
Link To Document