DocumentCode :
1838329
Title :
Megarad total ionizing dose and single event effects test results of a radhard-by-design 0.25 micron ASIC [space applications]
Author :
Hartwell, Mary ; Hafer, Craig ; Milliken, Peter ; Farris, Teresa
Author_Institution :
Aeroflex Colorado Springs, Inc., Colorado Springs, CO, USA
fYear :
2004
fDate :
22-22 July 2004
Firstpage :
104
Lastpage :
109
Abstract :
Total ionizing dose (>1 Mrad(Si)) and SEE test results at two commercial foundries for a 0.25 μm radhard-by-design ASIC are reported in this paper. Radhard-by-design techniques provide denser, faster and lower power space applications.
Keywords :
application specific integrated circuits; integrated circuit design; integrated circuit testing; radiation effects; radiation hardening (electronics); space vehicle electronics; 0.25 micron; 1 Mrad; SEE testing; low power space applications; radhard-by-design ASIC; radiation testing; single event effects; total ionizing dose; Application specific integrated circuits; CMOS process; CMOS technology; Foundries; Integrated circuit technology; Radiation hardening; Software libraries; Space technology; Technology management; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
Type :
conf
DOI :
10.1109/REDW.2004.1352914
Filename :
1352914
Link To Document :
بازگشت