Analysis of Blech product threshold in passivated AlCu interconnections

Author

Arnaud, Laurent ; Tartavel, G. ; Waltz, P. ; Ulmer, L.

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1998

fDate

1-3 Jun 1998

Firstpage

289

Lastpage

291

Abstract

The Blech product threshold (Blech, J. Appl. Phys. vol. 47, pp. 1203-1208, 1976) of encapsulated AlCu metallization was investigated in two level structures where W studs are located at both ends of the metal stripes. A high value of 10⁴ A/cm was experimentally measured either for multigrain and for quasi-bamboo microstructures. This value, about 5 times higher than previous values reported for unpassivated structure is explained on the basis of stresses in the structure

Keywords

aluminium alloys; copper alloys; crystal microstructure; electromigration; encapsulation; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; internal stresses; passivation; AlCu-W; Blech product threshold; W studs; electromigration; encapsulated AlCu metallization; metal stripes; multigrain microstructures; passivated AlCu interconnections; quasi-bamboo microstructures; structure stresses; two level structures; unpassivated structure; Anodes; Current density; Electromigration; Length measurement; Metallization; Packaging; Plugs; Stress; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704926

Filename

704926