DocumentCode :
1838368
Title :
Angular effects in proton-induced single-event upsets in silicon-on-sapphire and silicon-on-insulator devices
Author :
Kniffin, S.D. ; McCabe, J.F. ; Gardner, G.A. ; Lintz, J. ; Ross, C. ; Golke, K. ; Bums, B. ; Sanders, A.B. ; Reed, R.A. ; LaBel, K.A. ; Marshall, P.W. ; Liu, S.T. ; Kim, H.S. ; Forney, J.D. ; Tabbert, C.J. ; Carts, M.A. ; Swonger, J.W.
Author_Institution :
Orbital Sci. Corp., Dulles, VA, USA
fYear :
2004
fDate :
22-22 July 2004
Firstpage :
115
Lastpage :
119
Abstract :
We present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) devices.
Keywords :
integrated circuit design; integrated circuit testing; proton effects; radiation hardening (electronics); silicon-on-insulator; RHBD best practices; SEU angular effects; SEU rate; SOI devices; SOS devices; Si-Al/sub 2/O/sub 3/; Si-SiO/sub 2/; proton angle of incidence; proton-induced single-event upsets; radiation hardening by design; silicon-on-insulator; silicon-on-sapphire; Clocks; Extraterrestrial measurements; Manufacturing processes; NASA; Particle beams; Protons; Random access memory; Silicon on insulator technology; Single event upset; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
Type :
conf
DOI :
10.1109/REDW.2004.1352916
Filename :
1352916
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1838368
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