Title :
A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module
Author :
Yamamoto, K. ; Asada, T. ; Suzuki, S. ; Miura, T. ; Inoue, A. ; Miyakuni, S. ; Otsuji, J. ; Hattori, R. ; Miyazaki, Y. ; Shimura, T.
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P/sub out/ of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm P/sub out/ and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm P/sub out/ and a PAE of over 25% for EDGE900, a 28.5 dBm P/sub out/ and a PAE of over 25% for EDGE1800/1900.
Keywords :
MMIC amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; cellular radio; heterojunction bipolar transistors; telephone sets; 1800 MHz; 1900 MHz; 25 percent; 3.5 V; 45 percent; 50 percent; 900 MHz; GSM/EDGE dual-mode amplifier; HBT MMIC power amplifier; PAE; band select switch; diode switches; error vector magnitude; handset applications; receive-band noise power; triple-band power amplifier module; Circuits; Diodes; GSM; Heterojunction bipolar transistors; High power amplifiers; MMICs; Operational amplifiers; Power amplifiers; Semiconductor optical amplifiers; Switches;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012041
