Author :
Matsunaga, N. ; Nakamura, N. ; Higashi, K. ; Yamaguchi, H. ; Watanabe, T. ; Akiyama, K. ; Nakao, S. ; Fujita, K. ; Miyajima, H. ; Omoto, S. ; Sakata, A. ; Katata, T. ; Kagawa, Y. ; Kawashima, H. ; Enomoto, Y. ; Hasegawa, T. ; Shibata, H.
Abstract :
Highly reliable BEOL integration technology with porous low-k (k=2.3) was realized by development focusing on plasma damage control and moisture control. A hybrid dielectric scheme with damage resistant porous low-k films and buffer film was applied in view of its inherent advantages for realizing reliable porous low-k integration. A metallization process was developed from the viewpoint of suppressing morphology and adhesion degradation of barrier metal by oxidation. A dummy wiring pattern was also adopted to remove moisture absorbed in porous low-k films. Stress-migration and electromigration satisfying practical reliability were obtained with via size of 75 nm for the first time by utilizing all possible measures for reducing the damage and the moisture.
Keywords :
copper; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; moisture control; porous materials; 45 nm; 75 nm; BEOL integration reliability; BEOL process integration technology; Cu; absorbed moisture removal; barrier metal degradation reduction; damage resistant buffer film; damage resistant films; dummy wiring pattern; electromigration; hybrid dielectric scheme; interconnects; metallization process; moisture control; plasma damage control; porous low-k films; stress-migration; Adhesives; Copper; Degradation; Dielectrics; Metallization; Moisture control; Morphology; Oxidation; Plasmas; Wiring;
