DocumentCode :
1838570
Title :
Spectroscopic CD technology for gate process control
Author :
Levy, Ady ; Lakkapragada, Suresh ; Mieher, Walter ; Bhatia, Kamal ; Whitney, Umar ; Hankinson, Matt
Author_Institution :
Mercury Div., KLA-Tencor Corp., Milpitas, CA, USA
fYear :
2001
fDate :
2001
Firstpage :
141
Lastpage :
144
Abstract :
Spectroscopic CD (SCD) technology provides high precision shape information with excellent correlation to established critical dimension metrology. Poly-gate wafers from over 20 lots produced in a high-volume manufacturing fab were measured and analyzed with KLA-Tencor´s SCD and SEM CD tools. APC simulations on the SCD data demonstrate the potential to reduce the CD deviation from the process target. Focus-exposure process window analysis using additional shape information available with SCD shows the potential value of the more complete view for lithographic cluster tool monitoring
Keywords :
ellipsometry; integrated circuit manufacture; integrated circuit measurement; lithography; process control; shape measurement; ultraviolet spectroscopy; APC simulations; IC production; KLA-Tencor; critical dimension metrology; focus-exposure process window analysis; gate process control; high precision shape information; high-volume manufacturing fab; lithographic cluster tool monitoring; lithography process window monitoring; optical metrology technology; poly-gate wafers; semiconductor fabrication facility; spectroscopic CD technology; spectroscopic ellipsometry; Gratings; Lithography; Measurement uncertainty; Metrology; Monitoring; Process control; Resists; Semiconductor device manufacture; Shape; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962934
Filename :
962934
Link To Document :
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