Characterization and integration of hollow cathode magnetron sputtered Ti/TiN with low pressure Al planarization

Author

Lai, K.F. ; Tam, L.M. ; Lu, Q.

Author_Institution

Ginzton Res. Center, Novellus Syst., Palto Alto, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

292

Lastpage

294

Abstract

Ti-TiN deposited by hollow cathode magnetron (HCM) sputtering has been successfully integrated with the low pressure (LP) Al planarization process to replace collimated Ti as the wetting layer. The HCM Ti-TiN stack is an excellent Al wetting layer that is insensitive to contamination, provides a much wider process window, and reduces TiAl _x formation. It also promotes strongly oriented Al, which is superior to Al films on collimated Ti

Keywords

aluminium; chemical interdiffusion; crystal orientation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; sputter deposition; surface treatment; titanium; titanium compounds; wetting; Al films; Al planarization process; Al wetting layer; Al-TiN-Ti; HCM Ti-TiN stack; Ti-TiN hollow cathode magnetron sputter deposition; TiAl; TiAl_x formation; collimated Ti wetting layer; contamination insensitivity; hollow cathode magnetron sputtered Ti/TiN; low pressure Al planarization; process integration; process window; strongly oriented Al; Argon; Artificial intelligence; Atomic force microscopy; Cathodes; Collimators; Conductivity; Planarization; Scanning electron microscopy; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704927

Filename

704927