Title :
Full characterization of low-noise HEMTs using only noise figure measurements
Author :
Caddemi, A. ; Martines, G. ; Sannino, M.
Author_Institution :
Dipartimento di Ingegneria Elettrica, University of Palermo, Viale delle Scienze-90128 Palermo - Italy, (Phone +39 91 590404; Fax +39 91 488452)
Abstract :
A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. Selection of the optimum measuring conditions, all the steps of the experimental procedure, the data collecting and processing to derive all the parameters, are fully driven by an original (unpublished) software, even without the presence of an (unskilled) operator. Results are presented about the complete characterization of a series of ten pseudomorphicHEMTs in the 8-16 GHz range. The S-parameters are also compared with those measured by an ANA.
Keywords :
Gain measurement; HEMTs; MODFETs; Microwave measurements; Microwave theory and techniques; Microwave transistors; Noise figure; Noise measurement; Scattering parameters; Software measurement;
Conference_Titel :
ARFTG Conference Digest-Spring, 41st
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1993.327012