Development of a two-step electroplating process with a long-term stability for applying to Cu metallization of 0.1 μm generation logic ULSIs

Author

Arita, Koji ; Ito, Nobukazu ; Hosoi, Nobuki ; Miyamoto, Hidenobu

Author_Institution

ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan

fYear

2001

fDate

2001

Firstpage

155

Lastpage

158

Abstract

We have developed a two-step copper electroplating (EP) process using a seed-enhancement step with an alkali-metal-free Cu-pyrophosphate solution. The two-step EP has a sufficient filling property for next generation ULSIs. The solution using the seed-enhancement step has an excellent long-term stability of each component concentration, and there is no change of process performance over a two-month period. The two-step EP process achieved an excellent via-chain yield and a tight distribution of electromigration (EM) lifetime compared with the conventional EP process. Thus, the two-step EP process is a promising process for logic ULSIs of 0.1 μm generation and beyond

Keywords

ULSI; copper; electromigration; electroplating; integrated circuit manufacture; integrated circuit metallisation; integrated circuit reliability; integrated logic circuits; stability; 0.1 micron; Cu; Cu metallization; alkali-metal-free Cu-pyrophosphate solution; electromigration lifetime; logic ULSI devices; long-term stability; seed-enhancement step; two-step electroplating process; via-chain yield; Atherosclerosis; Chemical vapor deposition; Copper; Etching; Filling; Logic; Metallization; Monitoring; Stability; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962937

Filename

962937