Process development and integration of electroless cobalt cap with low k carbon doped oxide

Author

Naik, M. ; Shanmugasundram, A. ; Weidman, T. ; Fang, H. ; Zhu, Z. ; Mei, F. ; Wang, Y. ; Wijekoon, K. ; Lubomirsky, D. ; Pancham, I. ; Armacost, M.

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2005

fDate

6-8 June 2005

Firstpage

24

Lastpage

26

Abstract

Electroless CoWP was integrated with k∼3.0 carbon doped oxide using SiCN as the post CMP dielectric barrier. Process parameters that impacted leakage performance and line resistance increase were identified and resolved. Leakage performance equivalent to uncapped samples was obtained with minimal increase (0-2%) in line resistance for 90 nm node critical dimension. Via chain yields of >95% were obtained for 1 million via count chain with via resistance similar to uncapped samples. A >20x improvement in electromigration median time (T₅₀) was obtained at twice the current density of uncapped samples. Feasibility of direct low k deposition on CoWP is explored.

Keywords

carbon compounds; chemical mechanical polishing; cobalt; electroless deposition; electromigration; silicon compounds; 90 nm; SiCN; direct low k deposition; electroless CoWP; electroless cobalt cap; electromigration median time; leakage performance; line resistance increase; low k carbon doped oxide; post CMP dielectric barrier; process development; via chain yields; Adhesives; Cobalt; Conductivity; Copper; Current density; Dielectric materials; Electromigration; Kelvin; Organic materials; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499911

Filename

1499911