• DocumentCode
    1838713
  • Title

    Pseudo Epi, materials cost reduction

  • Author

    Aminzadeh, M. ; Ravi, K.V. ; Sery, G. ; Hu, Song

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    Historically Intel has used p/p+ epitaxial wafers for all products for more than 15 years. The epitaxial wafers have several key characteristics such as latch up immunity, oxygen free active area, and superior oxide quality compared to polished non-epi wafers. The epi wafers however are large materials cost contributors. Pseudo epi is an alternative to epi wafers with equivalent device performance and material cost savings of 25 to 30%. Pseudo epi or hydrogen anneal is expected to save Intel 6% of total 200 mm Si production costs in 2002 for one chipset process line. This savings is expected to increase to equivalent of 13% of 200 mm Si production cost when expanded to a 0.13 μm microprocessor process
  • Keywords
    annealing; boron; diffusion; elemental semiconductors; hydrogen; integrated circuit economics; integrated circuit manufacture; silicon; surface topography; 0.13 micron; 1 hour; 1200 C; 200 mm; 200 mm silicon production costs; B out diffusion; H anneal; H2; Intel; Si vacancy annealing; Si:B; chipset process line; furnace anneal; low doping concentration B; materials cost reduction; microprocessor process; pseudo epi wafers; pseudo epitaxial wafers; surface roughness improvement; vertical diffusion furnace; Annealing; Boron; Costs; Gettering; Hydrogen; Production; Rough surfaces; Silicon; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Symposium, 2001 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-6731-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2001.962940
  • Filename
    962940