DocumentCode
1838713
Title
Pseudo Epi, materials cost reduction
Author
Aminzadeh, M. ; Ravi, K.V. ; Sery, G. ; Hu, Song
Author_Institution
Intel Corp., Santa Clara, CA
fYear
2001
fDate
2001
Firstpage
167
Lastpage
170
Abstract
Historically Intel has used p/p+ epitaxial wafers for all products for more than 15 years. The epitaxial wafers have several key characteristics such as latch up immunity, oxygen free active area, and superior oxide quality compared to polished non-epi wafers. The epi wafers however are large materials cost contributors. Pseudo epi is an alternative to epi wafers with equivalent device performance and material cost savings of 25 to 30%. Pseudo epi or hydrogen anneal is expected to save Intel 6% of total 200 mm Si production costs in 2002 for one chipset process line. This savings is expected to increase to equivalent of 13% of 200 mm Si production cost when expanded to a 0.13 μm microprocessor process
Keywords
annealing; boron; diffusion; elemental semiconductors; hydrogen; integrated circuit economics; integrated circuit manufacture; silicon; surface topography; 0.13 micron; 1 hour; 1200 C; 200 mm; 200 mm silicon production costs; B out diffusion; H anneal; H2; Intel; Si vacancy annealing; Si:B; chipset process line; furnace anneal; low doping concentration B; materials cost reduction; microprocessor process; pseudo epi wafers; pseudo epitaxial wafers; surface roughness improvement; vertical diffusion furnace; Annealing; Boron; Costs; Gettering; Hydrogen; Production; Rough surfaces; Silicon; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962940
Filename
962940
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