DocumentCode
1838727
Title
CMOS image sensor readout employing in-pixel transistor current sensing
Author
Ignjatovic, Zeljko ; Zhang, Yang ; Bocko, Mark F.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
fYear
2008
fDate
18-21 May 2008
Firstpage
1858
Lastpage
1861
Abstract
We propose an analog CMOS image sensor with 10X faster readout settling time than standard active pixel sensor (APS) designs. The pixel in the proposed design is a standard APS source follower configuration thus retaining high fill factor. Negative feedback is applied to the readout of the pixel from a column shared circuit to increase its current driving capabilities and thereby reduce the settling time between correlated double sampling (CDS) samples, which significantly reduces the 1/f noise contributed by the in-pixel source follower transistor. In addition, we describe an improved active reset utilizing the current sensing method. We present analysis and simulations of the proposed current sensing active pixel (CSAP) sensor design in a standard 0.35 um CMOS process operating from a 3.3 V power supply.
Keywords
CMOS image sensors; transistors; CMOS image sensor readout; analog CMOS image sensor; current sensing active pixel; in-pixel source follower transistor; in-pixel transistor current sensing; standard active pixel sensor; voltage 3.3 V; Analytical models; CMOS image sensors; CMOS process; Circuit noise; Feedback circuits; Negative feedback; Noise reduction; Pixel; Power supplies; Sampling methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541803
Filename
4541803
Link To Document