• DocumentCode
    1838727
  • Title

    CMOS image sensor readout employing in-pixel transistor current sensing

  • Author

    Ignjatovic, Zeljko ; Zhang, Yang ; Bocko, Mark F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    1858
  • Lastpage
    1861
  • Abstract
    We propose an analog CMOS image sensor with 10X faster readout settling time than standard active pixel sensor (APS) designs. The pixel in the proposed design is a standard APS source follower configuration thus retaining high fill factor. Negative feedback is applied to the readout of the pixel from a column shared circuit to increase its current driving capabilities and thereby reduce the settling time between correlated double sampling (CDS) samples, which significantly reduces the 1/f noise contributed by the in-pixel source follower transistor. In addition, we describe an improved active reset utilizing the current sensing method. We present analysis and simulations of the proposed current sensing active pixel (CSAP) sensor design in a standard 0.35 um CMOS process operating from a 3.3 V power supply.
  • Keywords
    CMOS image sensors; transistors; CMOS image sensor readout; analog CMOS image sensor; current sensing active pixel; in-pixel source follower transistor; in-pixel transistor current sensing; standard active pixel sensor; voltage 3.3 V; Analytical models; CMOS image sensors; CMOS process; Circuit noise; Feedback circuits; Negative feedback; Noise reduction; Pixel; Power supplies; Sampling methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541803
  • Filename
    4541803