Title :
Series resonant tunneling diodes as a two-dimensional memory cell
Author :
Shieh, Ming-Huei ; Lin, Hung Chang
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A state-of-the-art multiple-variable memory cell that can provide many-quanta stable states is proposed. The basic cell is composed of two resonant tunneling diodes (RTDs) connected in series with a load. Access lines are connected to every joint between any two devices. When properly biased, the cell can have (N+1)2 or more stable quantized operating states that are defined by two variables, where N is the number of current peaks of the RTD. A cell with nine stable states has been implemented and demonstrated by a breadboard circuit using two two-peak RTDs
Keywords :
tunnel diodes; breadboard circuit; many-quanta stable states; series resonant tunnelling diodes; stable states; two-dimensional memory cell; Circuits; Digital systems; Diodes; Educational institutions; Hysteresis; Logic; Random access memory; Resistors; Resonance; Resonant tunneling devices;
Conference_Titel :
Multiple-Valued Logic, 1993., Proceedings of The Twenty-Third International Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-8186-3350-6
DOI :
10.1109/ISMVL.1993.289566
