Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

Author

Cidronali, A. ; Collodi, G. ; Camprini, M. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H.

Author_Institution

Dept. Electron. & Telecommun., Univ. of Florence, Firenze, Italy

fYear

2002

fDate

3-4 June 2002

Firstpage

297

Lastpage

300

Abstract

The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/spl bsol/TD based voltage controlled oscillator operating in the 6 GHz band suitable for wireless applications. The circuit draws a current of 1.75 mA at 500 mV and generates an output power of -16 dBm The maximum tuning range is 150 MHz and the single sideband-to-carrier ratio (SSCR) is of -105 dBc/Hz at 5 MHz.

Keywords

HEMT circuits; III-V semiconductors; indium compounds; low-power electronics; tunnel diode oscillators; voltage-controlled oscillators; 1.75 mA; 500 mV; 6 GHz; InP; InP HEMT; heterojunction interband tunnel diode; monolithic integration; negative differential resistance; quantum nonlinear device; semiconductor device; single sideband-to-carrier ratio; tuning range; ultra-low-power voltage controlled oscillator; wireless application; Energy consumption; HEMTs; Heterojunctions; MODFETs; Monolithic integrated circuits; Power generation; Semiconductor devices; Semiconductor diodes; Tunneling; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012053

Filename

1012053