Comparison of barrier materials and deposition processes for copper integration

Author

Moussavi, M. ; Gobil, Y. ; Ulmer, L. ; Perroud, L. ; Motte, P. ; Torres, J. ; Romagna, F. ; Fayolle, M. ; Palleau, J. ; Plissonier, M.

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1998

fDate

1-3 Jun 1998

Firstpage

295

Lastpage

297

Abstract

This paper reports the investigation of MOCVD (metal organic chemical vapor deposition) TiN, and IMP (ionized metal plasma) Ta and TaN thin films as barrier layers for copper metallization. Evaluation of both deposition techniques, including step coverage, Cu adhesion, Cu diffusion and selectivity with regard to the Cu-CMP process have been performed. Successful implementation with copper metallization in high aspect ratio line and via patterns is reported

Keywords

MOCVD; adhesion; chemical interdiffusion; copper; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma deposition; tantalum; tantalum compounds; titanium compounds; Cu adhesion; Cu diffusion; Cu-CMP process selectivity; Cu-Ta; Cu-TaN; Cu-TiN; MOCVD TiN; barrier layers; barrier materials; copper integration; copper metallization; deposition processes; deposition techniques; ionized metal plasma Ta thin films; ionized metal plasma TaN thin films; line aspect ratio; line patterns; metal organic chemical vapor deposition; step coverage; via patterns; Adhesives; Chemical vapor deposition; Copper; MOCVD; Metallization; Organic chemicals; Plasma chemistry; Plasma materials processing; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704928

Filename

704928