Title :
Comparison of barrier materials and deposition processes for copper integration
Author :
Moussavi, M. ; Gobil, Y. ; Ulmer, L. ; Perroud, L. ; Motte, P. ; Torres, J. ; Romagna, F. ; Fayolle, M. ; Palleau, J. ; Plissonier, M.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
This paper reports the investigation of MOCVD (metal organic chemical vapor deposition) TiN, and IMP (ionized metal plasma) Ta and TaN thin films as barrier layers for copper metallization. Evaluation of both deposition techniques, including step coverage, Cu adhesion, Cu diffusion and selectivity with regard to the Cu-CMP process have been performed. Successful implementation with copper metallization in high aspect ratio line and via patterns is reported
Keywords :
MOCVD; adhesion; chemical interdiffusion; copper; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma deposition; tantalum; tantalum compounds; titanium compounds; Cu adhesion; Cu diffusion; Cu-CMP process selectivity; Cu-Ta; Cu-TaN; Cu-TiN; MOCVD TiN; barrier layers; barrier materials; copper integration; copper metallization; deposition processes; deposition techniques; ionized metal plasma Ta thin films; ionized metal plasma TaN thin films; line aspect ratio; line patterns; metal organic chemical vapor deposition; step coverage; via patterns; Adhesives; Chemical vapor deposition; Copper; MOCVD; Metallization; Organic chemicals; Plasma chemistry; Plasma materials processing; Sputtering; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704928
