Title :
Impact of Cu barrier dielectrics upon stress-induced voiding of dual-damascene copper interconnects
Author :
Ishikawa, Kensuke ; Shimazu, Hiromi ; Oshima, Takayuki ; Noguchi, Junji ; Tamaru, Tsuyoshi ; Aoki, Hideo ; Ando, Toshio ; Iwasaki, Tomio ; Saito, Tatsuyuki
Author_Institution :
Micro Device Div., Hitachi, Ltd., Tokyo, Japan
Abstract :
In this paper, we discuss the stress-induced voiding (SIV) in dual-damascene Cu interconnects. To relax the Cu stress and its gradient, we focused on the Cu barrier dielectrics. The SIV of Cu interconnects was successfully suppressed by using SiC film as a Cu barrier dielectric. The finite element method (FEM) and the molecular dynamics (MD) analysis revealed the stress distribution and its effects on the void growth.
Keywords :
copper; dielectric thin films; finite element analysis; integrated circuit interconnections; integrated circuit reliability; molecular dynamics method; silicon compounds; stress relaxation; voids (solid); wide band gap semiconductors; Cu; FEM; SiC; barrier dielectric effects; dual-damascene interconnects; finite element method; molecular dynamics analysis; stress distribution; stress gradient relaxation; stress-induced voiding; void growth; Copper; Dielectric materials; Dielectric substrates; Materials reliability; Mechanical engineering; Silicon carbide; Tensile stress; Testing; Thermal stresses; Wire;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499916
